Terahertz emission from GaAs and InAs in a magnetic field
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Abstract
We have studied terahertz (THz) emission from InAs and GaAs in a magnetic field, and find that the emitted radiation is produced by coupled cyclotron-plasma charge oscillations. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-sapphire laser. We recorded the integrated THz power and the THz emission spectrum as a function of magnetic field at fields up to 5.5 T, and as function of temperature for T=10-280K. The maximum observed THz power is ∼1.6×10-13J/pulse (12 μW average power) from n-InAs (1.8×1016cm-3) at B=3.2T. We compare our results to semiclassical models of magnetoplasma oscillations of bulk free carriers and damped motion of free carriers in a two-dimensional electron gas. The bulk model describes THz emission from n-GaAs at all magnetic fields, and InAs at B=0. It fails to describe THz emission from InAs at nonzero magnetic fields. We show that a model including both bulk plasma oscillations and THz emission from a surface accumulation layer describes THz emission from InAs in a moderate magnetic field, but this model does not completely describe emission at fields |B|>1.0T.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Terahertz emission from GaAs and InAs in a magnetic field</title><author><name sortKey="Heyman, J N" uniqKey="Heyman J">J. N. Heyman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Macalester College, St. Paul</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Minnesota, Minneapolis, Minnesota 55455</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Physics, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author><author><name sortKey="Neocleous, P" uniqKey="Neocleous P">P. Neocleous</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Macalester College, St. Paul</wicri:cityArea></affiliation></author><author><name sortKey="Hebert, D" uniqKey="Hebert D">D. Hebert</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Macalester College, St. Paul</wicri:cityArea></affiliation></author><author><name sortKey="Crowell, P A" uniqKey="Crowell P">P. A. Crowell</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Macalester College, St. Paul</wicri:cityArea></affiliation></author><author><name sortKey="Muller, T" uniqKey="Muller T">T. Muller</name></author><author><name sortKey="Unterrainer, K" uniqKey="Unterrainer K">K. Unterrainer</name></author></titleStmt><publicationStmt><idno type="inist">01-0337266</idno><date when="2001-08-15">2001-08-15</date><idno type="stanalyst">PASCAL 01-0337266 AIP</idno><idno type="RBID">Pascal:01-0337266</idno><idno type="wicri:Area/Main/Corpus">010C20</idno><idno type="wicri:Area/Main/Repository">00FE76</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier mobility</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Plasma oscillations</term><term>Semiconductor plasma</term><term>Two-dimensional electron gas</term><term>submillimetre wave generation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7847</term><term>7145G</term><term>7320M</term><term>4265R</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Plasma semiconducteur</term><term>Oscillation plasma</term><term>Mobilité porteur charge</term><term>Gaz électron 2 dimensions</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied terahertz (THz) emission from InAs and GaAs in a magnetic field, and find that the emitted radiation is produced by coupled cyclotron-plasma charge oscillations. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-sapphire laser. We recorded the integrated THz power and the THz emission spectrum as a function of magnetic field at fields up to 5.5 T, and as function of temperature for T=10-280K. The maximum observed THz power is ∼1.6×10<sup>-13</sup>J/pulse (12 μW average power) from n-InAs (1.8×10<sup>16</sup>cm<sup>-3</sup>) at B=3.2T. We compare our results to semiclassical models of magnetoplasma oscillations of bulk free carriers and damped motion of free carriers in a two-dimensional electron gas. The bulk model describes THz emission from n-GaAs at all magnetic fields, and InAs at B=0. It fails to describe THz emission from InAs at nonzero magnetic fields. We show that a model including both bulk plasma oscillations and THz emission from a surface accumulation layer describes THz emission from InAs in a moderate magnetic field, but this model does not completely describe emission at fields |B|>1.0T.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>64</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Terahertz emission from GaAs and InAs in a magnetic field</s1></fA08><fA11 i1="01" i2="1"><s1>HEYMAN (J. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>NEOCLEOUS (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>HEBERT (D.)</s1></fA11><fA11 i1="04" i2="1"><s1>CROWELL (P. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>MULLER (T.)</s1></fA11><fA11 i1="06" i2="1"><s1>UNTERRAINER (K.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Minnesota, Minneapolis, Minnesota 55455</s1></fA14><fA14 i1="03"><s1>Institute for Solid State Electronics, Technical University Vienna, A-1040 Vienna, Austria</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s2>085202-085202-7</s2></fA20><fA21><s1>2001-08-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0337266</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied terahertz (THz) emission from InAs and GaAs in a magnetic field, and find that the emitted radiation is produced by coupled cyclotron-plasma charge oscillations. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-sapphire laser. We recorded the integrated THz power and the THz emission spectrum as a function of magnetic field at fields up to 5.5 T, and as function of temperature for T=10-280K. The maximum observed THz power is ∼1.6×10<sup>-13</sup>J/pulse (12 μW average power) from n-InAs (1.8×10<sup>16</sup>cm<sup>-3</sup>) at B=3.2T. We compare our results to semiclassical models of magnetoplasma oscillations of bulk free carriers and damped motion of free carriers in a two-dimensional electron gas. The bulk model describes THz emission from n-GaAs at all magnetic fields, and InAs at B=0. It fails to describe THz emission from InAs at nonzero magnetic fields. We show that a model including both bulk plasma oscillations and THz emission from a surface accumulation layer describes THz emission from InAs in a moderate magnetic field, but this model does not completely describe emission at fields |B|>1.0T.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70H47</s0></fC02><fC02 i1="02" i2="3"><s0>001B70A45G</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20M</s0></fC02><fC02 i1="04" i2="3"><s0>001B40B65R</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7145G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7320M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>4265R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>submillimetre wave generation</s0><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Plasma semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor plasma</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Oscillation plasma</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Plasma oscillations</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Mobilité porteur charge</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Carrier mobility</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gaz électron 2 dimensions</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Two-dimensional electron gas</s0></fC03><fN21><s1>232</s1></fN21><fN47 i1="01" i2="1"><s0>0133M000847</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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